High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p{sup +}-n junctions

Journal Article · Tue Jan 15 00:00:00 EST 2008 · Semiconductors

DOI:https://doi.org/10.1134/S1063782608010120· OSTI ID:22004940

Strokan, N B; Ivanov, A M; Sitnikova, A A; Sadokhin, A V ^[1]; Azarov, A Yu; Kossov, V G; Yafaev, R R ^[2]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
2. Electron-Optronic (Russian Federation)

Results obtained in a study of spectrometric characteristics of arrays of four detectors based on 4H-SiC ion-implantation-doped p{sup +}-n junctions in the temperature range 25-140 Degree-Sign C are reported for the first time. The junctions were fabricated by ion implantation of aluminum into epitaxial 4H-SiC layers of thickness {<=}45 {mu}m, grown by chemical vapor deposition with uncompensated donor concentration N{sub d} - N{sub a} = (4-6) Multiplication-Sign 10{sup 14} cm{sup -3}. The structural features of the ion-implantation-doped p{sup +}-layers were studied by secondary-ion mass spectrometry, transmission electron microscopy, and Rutherford backscattering spectroscopy in the channeling mode. Parameters of the diode arrays were determined by testing in air with natural-decay alpha particles with an energy of 3.76 MeV. The previously obtained data for similar single detectors were experimentally confirmed: the basic characteristics of the detector arrays, the charge collection efficiency and energy resolution, are improved as the working temperature increases.

• OSTI ID: 22004940
• Journal Information: Semiconductors, Vol. 42, Issue 1; Other Information: Copyright (c) 2008 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALPHA PARTICLES
CHARGE COLLECTION
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
EFFICIENCY
ENERGY RESOLUTION
EPITAXY
ION IMPLANTATION
LAYERS
MASS SPECTROSCOPY
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON CARBIDES
TEMPERATURE RANGE 0400-1000 K
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY