the effect of the periphery of metal-semiconductor Schottky-barrier contacts on their electrical characteristics

Journal Article · Sat Jan 15 04:00:00 EST 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611010210· OSTI ID:22004891

Novikov, V A ^[1]

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1. Tomsk State University (Russian Federation)

During the formation of the metal-semiconductor contact with a Schottky barrier (as a gold film on the p- or n-type gallium arsenide surface), an electric field E{sub l} built into the electric contact is induced, which propagates around the contact to the distance l (halo) tens of times larger than space-charge region sizes. This field reduces the electrostatic potential of the {phi}{sub Au} contact by a significant value {phi}*. In the general case, the halo size l and the decrease {phi}* in the electrostatic potential are controlled by the charge value and sign in the space-charge region, which depend on the contact diameter D, semiconductor concentration and conductivity type. For Au/n-GaAs Schottky-barrier contacts, a decrease in D results in the increasing role of periphery, which manifests itself in increasing {phi}* and decreasing {phi}{sub Au} and l. For Au/p-GaAs contacts, a decrease in D results in the decreasing effect of periphery, which appears in decreasing {phi}* and increasing {phi}{sub Au} and l. The absence of the space-charge region in metal-insulator-semiconductor contacts results in the fact that the halo size l and {phi}* are independent of their diameters.

• OSTI ID: 22004891
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 45; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRIC CONTACTS
ELECTRIC FIELDS
FILMS
GALLIUM ARSENIDES
GOLD
SEMICONDUCTOR MATERIALS
SPACE CHARGE
SURFACES