Modulation waves of charge carriers in n- and p-type semiconductor layers
- All-Russia Electrotechnical Institute (Russian Federation)
The effect of the carrier mobility dependence on the electric field strength, {mu}(F), on the propagation of waves of injected carriers in n- and p-type layers in the quasi-neutral drift mode has been studied. It is shown that consideration of the dependence {mu}(F) differently affects the motion of minority carriers in n- and p-type layers. The motion of an electron wave in the p-type base of a p{sup +}-p-n{sup +} structure is slowed down, and that of a hole wave in the n-base of a p{sup +}-n-n{sup +} structure is speeded up. The results obtained supplement the previously suggested classical description of the propagation of a wave of minority carriers, which disregarded the effect of {mu}(F) dependences. The results of an analytical calculation are confirmed using a numerical experiment.
- OSTI ID:
- 22004874
- Journal Information:
- Semiconductors, Vol. 45, Issue 2; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
A charge carrier transport model for donor-acceptor blend layers
Minority carrier lifetime and luminescence efficiency of 1. 3. mu. m InGaAsP-InP double heterostructure layers