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Insulator band gap in graphane nanoribbons

Journal Article · · Semiconductors
 [1]
  1. National Nuclear Research University 'MEPhI' (Russian Federation)

A theoretical treatment of the insulator band gap E{sub g} of graphane nanoribbons, i.e., graphene monolayer nanoribbons with both sides completely saturated with hydrogen, is presented. It is shown that E{sub g} increases with decreasing nanoribbon width and is practically independent of the specific (zigzag or armchair) atomic structure of the nanoribbon edges.

OSTI ID:
22004813
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 45; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

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