Analysis of threshold conditions for generation of a closed mode in a Fabry-Perot semiconductor laser

Journal Article · Sun May 15 00:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611050265· OSTI ID:22004807

Podoskin, A A; Pikhtin, N A; Sokolova, Z N; Leshko, A Y; Tarasov, I S ^[1]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

Threshold conditions for generation of a closed mode in the crystal of the Fabry-Perot semiconductor laser with a quantum-well active region are analyzed. It is found that main parameters affecting the closed mode lasing threshold for the chosen laser heterostructure are as follows: the optical loss in the passive region, the optical confinement factor of the closed mode in the gain region, and material gain detuning. The relations defining the threshold conditions for closed mode lasing in terms of optical and geometrical characteristics of the semiconductor laser are derived. It is shown that the threshold conditions can be satisfied at a lower material gain in comparison with the Fabry-Perot cavity mode due to zero output loss for the closed mode.

• OSTI ID: 22004807
• Journal Information: Semiconductors, Vol. 45, Issue 5; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALS
GAIN
LOSSES
QUANTUM WELLS
SEMICONDUCTOR LASERS