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Title: Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

Abstract

Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

Authors:
;  [1]
  1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22004776
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 7; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ENERGY LEVELS; HOLES; LAYERS; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; QUANTUM DOTS; SPECTRA; WAVELENGTHS

Citation Formats

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru, and Chistokhin, I. B.. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix. United States: N. p., 2011. Web. doi:10.1134/S1063782611070219.
Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru, & Chistokhin, I. B.. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix. United States. doi:10.1134/S1063782611070219.
Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru, and Chistokhin, I. B.. Fri . "Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix". United States. doi:10.1134/S1063782611070219.
@article{osti_22004776,
title = {Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix},
author = {Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru and Chistokhin, I. B.},
abstractNote = {Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.},
doi = {10.1134/S1063782611070219},
journal = {Semiconductors},
issn = {1063-7826},
number = 7,
volume = 45,
place = {United States},
year = {2011},
month = {7}
}