Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties
- Russian Academy of Sciences, Institute for Analytical Instrumentation (Russian Federation)
- Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation)
A method for the formation of single GaAs semiconductor nanowhiskers and their assemblies on the tip of a chemically etched tungsten needle by molecular-beam epitaxy is proposed. The focused-ionbeam technique was used to separate a single nanowhisker. Electronic properties of single nanowhiskers were studied by elastic tunneling spectroscopy in ultrahigh vacuum. The band gap and the doping level of GaAs whiskers were determined using the current-voltage characteristics obtained from these measurements.
- OSTI ID:
- 22004756
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 45; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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