Specific features of photoluminescence properties of copper-doped cadmium selenide quantum dots

Journal Article · Thu Sep 15 04:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611090223· OSTI ID:22004738

Dorofeev, S G; Tananaev, P N ^[1]; Timoshenko, V Yu ^[2]

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1. Moscow State University, Faculty of Chemistry (Russian Federation)
2. Moscow State University, Faculty of Physics (Russian Federation)

The effect of doping with copper on the photoluminescence properties of cadmium selenide quantum dots 4 nm in dimension is studied. The quenching of the excitonic photoluminescence band related to the quantum dots and the appearance of an impurity photoluminescence band in the near-infrared region are observed after doping of the quantum dots with copper. It is established that, on doping of the quantum dots, the photoluminescence kinetics undergoes substantial changes. The photoluminescence kinetics of the undoped quantum dots is adequately described by a sum of exponential relaxation relations, whereas the photoluminescence kinetics experimentally observed in the region of the impurity band of the copper-doped samples follows stretched exponential decay, with the average lifetimes 0.3-0.6 {mu}s at the photon energies in the range of 1.47-1.82 eV. The experimentally observed changes in the photoluminescence properties are attributed to transformation of radiative centers in the quantum dots when doped with copper atoms.

• OSTI ID: 22004738
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 45; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM
COPPER
DOPED MATERIALS
ELECTRONIC STRUCTURE
IMPURITIES
KINETICS
PHOTOLUMINESCENCE
QUANTUM DOTS
RELAXATION