Band gap of CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals

Journal Article · Sat Oct 15 04:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611100137· OSTI ID:22004725

Sklyarchuk, V M; Sklyarchuk, O V; Maslyanchuk, O L ^[1]

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1. Chernovtsy National University (Ukraine)

The band gap E{sub g} of the CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals and its temperature dependence are determined by optical methods. This is motivated by considerable contradictoriness of the published data, which hampers the interpretation and calculation of characteristics of detectors of X-ray and {gamma} radiation based on these materials (E{sub g} = 1.39-1.54 and 1.51-1.6 eV for CdTe and Cd{sub 0.9}Zn{sub 0.1}Te, respectively). The used procedure of determination of E{sub g} is analyzed from the viewpoint of the influence of the factors leading to inaccuracies in determination of its value. The measurements are performed for well-purified high-quality samples. The acquired data for CdTe (E{sub g} = 1.47-1.48 eV) and Cd{sub 0.9}Zn{sub 0.1}Te (E{sub g} = 1.52-1.53 eV) at room temperature substantially narrow the range of accurate determination of E{sub g}.

• OSTI ID: 22004725
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 45; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
CRYSTALS
EV RANGE
MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
X RADIATION