Formation of light-emitting nanostructures in layers of stoichiometric SiO{sub 2} irradiated with swift heavy ions
- Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics (Russian Federation)
- Joint Institute for Nuclear Research (Russian Federation)
Thermally grown SiO{sub 2} layers have been irradiated with 700-MeV Bi ions with doses of (3-10) Multiplication-Sign 10{sup 12} cm{sup -2}. It is found that, even after a dose of 3 Multiplication-Sign 10{sup 12} cm{sup -2}, a photoluminescence band in the region of 600 nm appears. Its intensity levels off at a dose of {approx}5 Multiplication-Sign 10{sup 12} cm{sup -2}. The nature of the emission centers is studied by the methods of infrared transmission, Raman scattering, X-ray photoelectron spectroscopy, ellipsometry, and the reaction to passivating low-temperature anneals. It is established that irradiation brings about a decrease in the number of Si-O bonds with a relevant increase in the Si-Si bonds. It is assumed that the photoluminescence is caused by nanostructures containing an excess Si and/or having a deficit of O. The reaction of reduction of SiO{sub 2} proceeds in ion tracks due to high levels of ionization and heating within these tracks. The dose dependence is used to estimate the diameter of a track at 8-9 nm.
- OSTI ID:
- 22004720
- Journal Information:
- Semiconductors, Vol. 45, Issue 10; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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