Thermal metalorganic chemical vapor deposition of Ti-Si-N films for diffusion barrier applications
- Sandia National Labs., Albuquerque, NM (United States)
- Louisiana State Univ., Baton Rouge, LA (United States)
- Schumacher, Inc., Carlsbad, CA (United States)
Structurally disordered refractory ternary films such as titanium silicon nitride (Ti-Si-N) have potential as advanced diffusion barriers in future ULSI metallization schemes. Here the authors present results on purely thermal metalorganic chemical vapor deposition (CVD) of Ti-Si-N. At temperatures between 300 and 450 C, tetrakis(diethylamido)titanium (TDEAT), silane, and ammonia react to grow Ti-Si-N films with Si contents of 0--20 at.%. Typical impurity contents are 5--10 at.%H and 0.5 to 1.5 at.% C, with no O or other impurities detected in the bulk of the film. Although the film resistivity increases with increasing Si content, it remains below 1,000 {micro}{Omega}-cm for films with less than 5 at.% Si. These films are promising candidates for advanced diffusion barriers.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 219352
- Report Number(s):
- SAND-96-0919C; CONF-960401-4; ON: DE96009176; TRN: AHC29609%%83
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
Similar Records
Atmospheric pressure chemical vapor deposition of titanium nitride from tetrakis (diethylamido) titanium and ammonia
Chemical vapor deposition of titanium{endash}silicon{endash}nitride films