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Title: Origin of room temperature d{sup 0} ferromagnetism and characteristic photoluminescence in pristine SnO{sub 2} nanowires: A correlation

Journal Article · · Journal of Solid State Chemistry
;  [1]
  1. Department of Material Sciences, S.N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700098, West Bengal (India)

Arrays of SnO{sub 2} nanowires are fabricated by employing a wet chemical template assisted sol-gel route using ordered nanoporous anodic aluminium oxide as the host. The origin of room temperature d{sup 0} ferromagnetism in pristine polycrystalline SnO{sub 2} nanowires is investigated by correlating photoluminescence and electron paramagnetic resonance (EPR) studies. It has been found that the naturally grown structural defects of oxygen vacancies namely singly ionised oxygen vacancy (V{sub O}{sup {center_dot}}) clusters induce the characteristic photoluminescence and contribute in ferromagnetism of pristine SnO{sub 2} nanowires at room temperature. The presence of the V{sub O}{sup {center_dot}} structural defects in the pure SnO{sub 2} nanowires is also assured by the EPR spectroscopy. Present study will help understand the puzzle about the unexpected magnetic phenomenon in these undoped wide band gap oxide semiconductors. Highlights: Black-Right-Pointing-Pointer SnO{sub 2} NWs are fabricated by wet chemical AAO template assisted route. Black-Right-Pointing-Pointer SnO{sub 2} NWs exhibit d{sup 0} ferromagnetism at room temperature. Black-Right-Pointing-Pointer Origin of ferromagnetism is correlated with photoluminescence and EPR studies. Black-Right-Pointing-Pointer Oxygen vacancy clusters are attributed to boost ferromagnetism in SnO{sub 2} NWs.

OSTI ID:
21612923
Journal Information:
Journal of Solid State Chemistry, Vol. 186; Other Information: DOI: 10.1016/j.jssc.2011.11.038; PII: S0022-4596(11)00644-X; Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
Country of Publication:
United States
Language:
English