Synthesis and characterization of (H{sub 2}dab){sub 2}Cu{sub 8}Ge{sub 4}S{sub 14}{center_dot}2H{sub 2}O: An expanded framework based on icosahedral Cu{sub 8}S{sub 12} cluster
- Department of Chemistry, Dalian University of Technology, Dalian 116024 (China)
- Department of Materials, Dalian University of Technology, Dalian 116024 (China)
A new three-dimensional framework copper-thiogermanate, (H{sub 2}dab){sub 2}Cu{sub 8}Ge{sub 4}S{sub 14}{center_dot}2H{sub 2}O (1), was prepared under solvothermal condition and characterized by elemental analysis, single-crystal and powder X-ray diffraction, thermogravimetric analysis and UV-vis diffuse reflectance spectroscopy. Compound 1 crystallizes in the monoclinic space group P2(1)/c, a=11.444(4) A, b=12.984(4) A, c=12.455(6) A, {beta}=91.527(1) Degree-Sign , V=1850.2(3) A{sup 3}, Z=2. It contains a new three-dimensional Cu-Ge-S framework constructed from icosahedral [Cu{sub 8}S{sub 12}]{sup 16-} clusters linked by [GeS{sub 4}]{sup 4-} and dimeric [Ge{sub 2}S{sub 6}]{sup 4-} units, with diprotonated 1,4-dab (1,4-diaminobutane) and H{sub 2}O molecules located in the intersecting channels. UV-vis reflectance spectroscopy reveals the band gap of compound 1 is 2.5 eV. - Graphical abstract: Compound 1 contains a 3D expanded framework constructed from icosahedral Cu{sub 8}S{sub 12} clusters linked by GeS{sub 4} and dimeric Ge{sub 2}S{sub 6} units, with diprotonated 1,4-dab and H{sub 2}O molecules located in the channels. Highlights: Black-Right-Pointing-Pointer A new 3-D framework copper-thiogermanate was prepared under solvothermal condition. Black-Right-Pointing-Pointer The framework is built up from icosahedral Cu{sub 8}S{sub 12} clusters linked by GeS{sub 4} and dimeric Ge{sub 2}S{sub 6} units. Black-Right-Pointing-Pointer The result provides a new strategy to expand octahedral SBUs-based framework. Black-Right-Pointing-Pointer Compound 1 is a semiconductor with the band gap of 2.5 eV.
- OSTI ID:
- 21612896
- Journal Information:
- Journal of Solid State Chemistry, Vol. 186; Other Information: DOI: 10.1016/j.jssc.2011.11.030; PII: S0022-4596(11)00636-0; Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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