Synthesis, structure, and electronic structure of CsAgGa{sub 2}Se{sub 4}
- Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China)
The new metal chalcogenide CsAgGa{sub 2}Se{sub 4} has been synthesized by means of the reactive flux method. It crystallizes in the space group P2{sub 1}/c of the monoclinic system with cell dimensions of a=11.225(2) A, b=7.9443(16) A, c=21.303(4) A, {beta}=103.10(3), V=1850.3(6), and Z=8. The structure contains two-dimensional {sub {infinity}}{sup 2}[AgGa{sub 2}Se{sub 4}]{sup -} layers separated by Cs{sup +} cations. The {sub {infinity}}{sup 2}[AgGa{sub 2}Se{sub 4}]{sup -} superlayer possesses a novel chain-sublayer-chain structure: a {sub {infinity}}{sup 2}[Ag{sub 2}GaSe{sub 6}]{sup 7-} sublayer, composed of {sub {infinity}}{sup 1}[AgGaSe{sub 4}]{sup 4-} chains that are further connected by Ag{sup +} ions, is sandwiched by parallel {sub {infinity}}{sup 1}[Ga{sub 3}Se{sub 8}]{sup 7-} chains to generate the {sub {infinity}}{sup 2}[AgGa{sub 2}Se{sub 4}]{sup -} superlayer. From a band structure calculation, the orbitals of all atoms have contributions to the bottoms of conduction bands, but the band gap is mainly determined by the 4s, 4p orbitals of Ga and Se. - Graphical Abstract: CsAgGa{sub 2}Se{sub 4} contains two-dimensional {sub {infinity}}{sup 2}[AgGa{sub 2}Se{sub 4}]{sup -} layers with a novel chain-sublayer-chain structure. Highlights: Black-Right-Pointing-Pointer New chalcogenide CsAgGa{sub 2}Se{sub 4} has been synthesized. Black-Right-Pointing-Pointer It possesses a new structure type with {sub {infinity}}{sup 2}[AgGa{sub 2}Se{sub 4}]{sup -} layers separated by Cs{sup +} cations. Black-Right-Pointing-Pointer {sub {infinity}}{sup 2}[AgGa{sub 2}Se{sub 4}]{sup -} consists of a {sub {infinity}}{sup 2}[Ag{sub 2}GaSe{sub 6}]{sup 7-} sublayer sandwiched by {sub {infinity}}{sup 1}[Ga{sub 3}Se{sub 8}]{sup 7-} chains. Black-Right-Pointing-Pointer Band gap of CsAgGa{sub 2}Se{sub 4} is mainly determined by the 4s, 4p orbitals of Ga and Se.
- OSTI ID:
- 21612889
- Journal Information:
- Journal of Solid State Chemistry, Vol. 186; Other Information: DOI: 10.1016/j.jssc.2011.11.014; PII: S0022-4596(11)00617-7; Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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