Weak localization/antilocalization in a nearly symmetric In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666544· OSTI ID:21612425

Faniel, S; Matsuura, T; Koga, T ^[1]; Mineshige, S ^[1]; Sekine, Y ^[2]

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1. Graduate School of Information Science and Technology, Hokkaido University, Sapporo, 060-0814 (Japan)
2. NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)

We report weak antilocalization (WAL) measurements in a nearly symmetric In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well. In this system, an enhancement of the spin-orbit scattering time, equivalently the weakening of the WAL effect, is expected at carrier densities N{sub s} where equal magnitudes between the Rashba and Dresselhaus parameters ({alpha} = {+-}{beta}) are realized. Our magnetotransport measurements indeed exhibited a weakening of the WAL effect as a function of N{sub s}, though the weakening took place at only one carrier density. Our interpretation is that the value of {beta} is so small that the two carrier densities corresponding to {alpha} = {beta} and {alpha} = -{beta} are very close to each other. It turned out that the deduced values for the bulk Dresselhaus parameter {gamma} in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum wells is considerably smaller than the k{center_dot}p value of 27 eVA{sup 3}.

• OSTI ID: 21612425
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666544; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
CARRIER DENSITY
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
L-S COUPLING
MAGNETORESISTANCE
MOLECULAR BEAM EPITAXY
ORBITS
QUANTUM WELLS
SPIN
SYMMETRY
ALUMINIUM COMPOUNDS
ANGULAR MOMENTUM
ARSENIC COMPOUNDS
ARSENIDES
COUPLING
CRYSTAL GROWTH METHODS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INTERMEDIATE COUPLING
NANOSTRUCTURES
PARTICLE PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES