Mechanical vibrations induced resonant breakdown of the Coulomb blockade

Journal Article · Fri Dec 23 04:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666420· OSTI ID:21612401

Pogosov, A G; Budantsev, M V; Shevyrin, A A ^[1]; Plotnikov, A E; Bakarov, A K; Toropov, A I ^[1]

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1. Institute of Semiconductor Physics, SB RAS, Novosibirsk (Russian Federation)

Influence of forced mechanical vibrations of a suspended single-electron transistor on electron tunneling through the quantum dot limited by the Coulomb blockade is investigated. It is shown that mechanical oscillations of the quantum dot lead to the Coulomb blockade breakdown, shown in sharp resonant peaks in the transistor conductance dependence on the excitation frequency at values corresponding to the mechanical oscillations eigen modes. The observed effect is presumably connected with oscillations of the mutual electrical capacitances between the quantum dot and surrounding electrodes.

• OSTI ID: 21612401
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1399; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
BREAKDOWN
CAPACITANCE
COULOMB FIELD
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
ELECTRODES
ELECTRONS
ELEMENTARY PARTICLES
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXCITATION
FERMIONS
LEPTONS
MECHANICAL VIBRATIONS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
OSCILLATIONS
PHYSICAL PROPERTIES
QUANTUM DOTS
SEMICONDUCTOR DEVICES
TRANSISTORS
TUNNEL EFFECT