skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: In-situ Synchrotron Radiation X-ray Scattering Study On The Initial Structure Of Atomic Layer Deposition

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3666330· OSTI ID:21612383
 [1];  [2];  [3]
  1. Pohang Accelerator Laboratory, POSTECH, Pohang, Gyeongbuk (Korea, Republic of)
  2. Department of Physics, Soongsil univ., Seoul (Korea, Republic of)
  3. Department of MSE, POSTECH, Pohang, Gyeongbuk (Korea, Republic of)

Due to the excellent conformality of ALD, it is not only adopted thin film, but also has been adopted for the fabrication of nanostructures. The surface reaction of ALD process is dependent on the substrate condition, thus the study on initial stage of ALD process is crucial to achieve controllable film growth. By the way, because of quite low scattering intensity of initial ultra thin layer, the high flux Synchrotron Radiation is needed. Synchrotron radiation x-ray scattering measurements allow us to investigate the atomic structure evolution of a few nanometer thickness films at the initial growth stage, nondestructively. Ru and TaN ALD films were grown. The thickness, roughness, and electron density were estimated by X-Ray Reflectivity (XRR) analysis. The island structures and its coverage also were estimated.

OSTI ID:
21612383
Journal Information:
AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666330; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English