Impact of Laser Radiation on Microhardness of a Semiconductor
- Laboratory of Semiconductor Physics, Riga Technical University, 14 Azenes Str., Riga, LV-1048 (Latvia)
- Department of Physics, Akaki Tsereteli State University, 59 Tamar Mephe Sr., Kutaisi, 4600 (Georgia)
- Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., Riga, LV-1063 (Latvia)
It was found that strongly absorbed Nd:YAG laser radiation leads to a non-monotonous dependence of microhardness of p- and n-type Si crystals on laser radiation. This dependence is characterized by two maxima for p-Si and one maximum for n-Si crystals. In both cases the increase of microhardness at higher laser intensity is explained by formation of mechanically compressed layer at the irradiated surface due to concentration of the interstitial atoms of Si at the surface in temperature gradient field. The decrease of the microhardness is explained by formation of nano-cones as a result of plastic deformation of the mechanically stressed layer. The additional maximum at lower laser intensity for p-Si crystal is explained by p-n type inversion of Si conductivity.
- OSTI ID:
- 21612379
- Journal Information:
- AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666315; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ATOMIC FORCE MICROSCOPY
CRYSTALS
INTERSTITIALS
LASER RADIATION
LAYERS
MICROHARDNESS
NEODYMIUM LASERS
N-TYPE CONDUCTORS
PLASTICITY
P-TYPE CONDUCTORS
SILICON
SURFACES
TEMPERATURE GRADIENTS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELEMENTS
HARDNESS
LASERS
MATERIALS
MECHANICAL PROPERTIES
MICROSCOPY
POINT DEFECTS
RADIATIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SOLID STATE LASERS