Non-Ideal p-n junction Diode of Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6, 0.7) Thin Films

Journal Article · Mon Dec 12 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3653616· OSTI ID:21612364

Mustafa, Falah I ^[1]; Gupta, Shikha; Goyal, N; Tripathi, S K ^[2]

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1. Solar Energy Research Center, Renewable Energy Directorate, Ministry of Science and Technology, Baghdad (Iraq)
2. Department of Physics, Panjab University, Chandigarh -160014 (India)

We have made diodes consisting of the same alloy i.e. Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6 and 0.7), but change the concentration of Sb metal from 40% to 70% atomic weight percentage. It is observed from the Hall measurements that the nature of charge carriers have changed from p- to n-type at x = 0.6 for Sb{sub x}Se{sub 1-x}. We have measured I-V characteristics of four p-n junction diodes i.e. p-Sb{sub 2}Se{sub 3}/n-Sb{sub 3}Se{sub 2}, p-Sb{sub 2}Se{sub 3}/n-Sb{sub 7}Se{sub 3}, p-SbSe/n-Sb{sub 3}Se{sub 2}, p-SbSe/n-Sb{sub 7}Se{sub 3}. From the I-V plots we have calculated the parameters as built-in voltage (V{sub bi}), forward resistance (R{sub f}), ideal factor (n), saturation current (I{sub o}), breakdown current (I{sub Bd}) and breakdown voltage (V{sub Bd}).

• OSTI ID: 21612364
• Journal Information: AIP Conference Proceedings, Vol. 1393, Issue 1; Conference: ICACNM-2011: International conference on advances in condensed and nano materials, Chandigarh (India), 23-26 Feb 2011; Other Information: DOI: 10.1063/1.3653616; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ANTIMONY SELENIDES
BREAKDOWN
CHARGE CARRIERS
CONCENTRATION RATIO
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
HALL EFFECT
MAGNETIC MATERIALS
N-TYPE CONDUCTORS
P-N JUNCTIONS
P-TYPE CONDUCTORS
THIN FILMS
ANTIMONY COMPOUNDS
CHALCOGENIDES
CURRENTS
DIMENSIONLESS NUMBERS
ELECTRICAL PROPERTIES
FILMS
MATERIALS
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS