Metrology and Characterization Challenges for Emerging Research Materials and Devices
- Semiconductor Research Corporation, P.O. Box 12053, Research Triangle Park, NC 27709 (United States)
- National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899 (United States)
The International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) and Emerging Research Devices (ERD) Technology Workgroups have identified materials and devices that could enable continued increases in the density and performance of future integrated circuit (IC) technologies and the challenges that must be overcome; however, this will require significant advances in metrology and characterization to enable progress. New memory devices and beyond CMOS logic devices operate with new state variables (e.g., spin, redox state, etc.) and metrology and characterization techniques are needed to verify their switching mechanisms and scalability, and enable improvement of operation of these devices. Similarly, new materials and processes are needed to enable these new devices. Additionally, characterization is needed to verify that the materials and their interfaces have been fabricated with required quality and performance.
- OSTI ID:
- 21612179
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1395; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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