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Title: Electro-Optical Switching Behavior of a Mott Insulator--Band Insulator Interface

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3606181· OSTI ID:21608200
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  1. Condensed Matter-Low Dimensional Systems Laboratory, Department of Physics, Indian Institute of Technology, Kanpur-208016 (India)

Here we present our results of a large photoconductivity in ultra-thin epitaxial layers of LaTiO{sub 3}(LTO) grown on SrTiO{sub 3}(STO) single crystal surfaces on exposure to ultraviolet light. We note that the change in conductivity on photo-exposure can be modulated by an electric field applied in field effect transistor geometry. We present a scenario where electrons from the lower Hubbard band of LTO and oxygen defects states of STO accumulate at the interface. The extent of this accumulation is modified by electric and photon fields giving rise to a potentially new electronic device.

OSTI ID:
21608200
Journal Information:
AIP Conference Proceedings, Vol. 1349, Issue 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606181; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English

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