Effect of oxygen gas pressure on the kinetics of alumina film growth during the oxidation of Al(111) at room temperature

Journal Article · Thu Sep 15 00:00:00 EDT 2011 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.84.125445· OSTI ID:21596879

Na, Cai; Guangwen, Zhou; Mueller, Kathrin; Starr, David E ^[1]

---

1. Department of Mechanical Engineering and Multidisciplinary Program in Materials Science and Engineering, State University of New York, Binghamton, New York 13902 (United States)

We have studied the effect of oxygen pressure on the self-limiting oxidation of an Al(111) surface at room temperature for oxygen pressures from 1x10{sup -8} to 5 Torr. Using x-ray photoelectron spectroscopy measurements, we monitor the oxidation kinetics and the oxide film thickness for different oxidation times and pressures. After a rapid initial growth stage, the oxide film reaches a saturated thickness, which depends on the oxygen pressure. The kinetic potential, oxide growth rate, oxide film limiting thickness, and the density of oxygen anions on the oxide surface are determined by the measured oxidation kinetics. These quantities show a Langmuir isotherm dependence on the oxygen gas pressure.

• OSTI ID: 21596879
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 84, Issue 12; Other Information: DOI: 10.1103/PhysRevB.84.125445; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ALUMINIUM OXIDES
DENSITY
FILMS
KINETICS
OXIDATION
OXYGEN
PRESSURE DEPENDENCE
SURFACES
TEMPERATURE RANGE 0273-0400 K
THICKNESS
X-RAY PHOTOELECTRON SPECTROSCOPY
ALUMINIUM COMPOUNDS
CHALCOGENIDES
CHEMICAL REACTIONS
DIMENSIONS
ELECTRON SPECTROSCOPY
ELEMENTS
METALS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL PROPERTIES
SPECTROSCOPY
TEMPERATURE RANGE