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Title: Ternary rare-earth zinc arsenides REZn{sub 1-x}As{sub 2} (RE=La-Nd, Sm)

Journal Article · · Journal of Solid State Chemistry
 [1];  [1]
  1. Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada)

The ternary rare-earth zinc arsenides REZn{sub 1-x}As{sub 2} (RE=La-Nd, Sm) were prepared by reaction of the elements at 800 deg. C. Single-crystal and powder X-ray diffraction analysis revealed a defect SrZnBi{sub 2}-type average structure for the La member (Pearson symbol tI16, space group I4/mmm, Z=4; a=4.0770(9) A, c=20.533(5) A), in contrast to defect HfCuSi{sub 2}-type average structures for the remaining RE members (Pearson symbol tP8, space group P4/nmm, Z=2; a=4.0298(5)-3.9520(4) A, c=10.222(1)-10.099(1) A in the progression from Ce to Sm). The homogeneity range is not appreciable (estimated to be narrower than 0.6<1-x<0.7 in SmZn{sub 1-x}As{sub 2}) and the formula REZn{sub 0.67}As{sub 2} likely represents the Zn-rich phase boundary. The Ce-Nd members are Curie-Weiss paramagnets. LaZn{sub 0.67}As{sub 2} shows activated behavior in its electrical resistivity, whereas SmZn{sub 0.67}As{sub 2} exhibits anomalies in its temperature dependence of the electrical resistivity. - Graphical abstract: LaZn{sub 1-x}As{sub 2} adopts a SrZnBi{sub 2}-type structure whereas the remaining members of the REZn{sub 1-x}As{sub 2} series (RE=Ce-Nd, Sm) adopt a HfCuSi{sub 2}-type structure. Highlights: > REZn{sub 1-x}As{sub 2} adopts SrZnBi{sub 2}-type (RE=La) or HfCuSi{sub 2}-type (RE=Ce-Nd, Sm) structures. > Trends in RE substitution and local distortion around Zn-centered tetrahedra can be rationalized by geometrical factors. > Zn vacancies occur to reduce Zn-As and As-As antibonding interactions.

OSTI ID:
21580236
Journal Information:
Journal of Solid State Chemistry, Vol. 184, Issue 9; Other Information: DOI: 10.1016/j.jssc.2011.07.002; PII: S0022-4596(11)00371-9; Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
Country of Publication:
United States
Language:
English