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Title: Characterization and photocatalytic activity of Fe- and N-co-deposited TiO{sub 2} and first-principles study for electronic structure

Journal Article · · Journal of Solid State Chemistry
 [1];  [2];  [1]
  1. Department of Materials Science and Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 40249, Taiwan (China)
  2. Department of Materials Science and Engineering, MingDao University, 369 Wen-Hua Road, Changhua 52345, Taiwan (China)

Titanium dioxide (TiO{sub 2}), co-deposited with Fe and N, is first implanted with Fe by a metal plasma ion implantation (MPII) process and then annealed in N{sub 2} atmosphere at a temperature regime of 400-600 deg. C. First-principle calculations show that the (Fe, N) co-deposited TiO{sub 2} films produced additional band gap levels at the bottom of the conduction band (CB) and on the top of the valence band (VB). The (Fe, N) co-deposited TiO{sub 2} films were effective in both prohibiting electron-hole recombination and generating additional Fe-O and N-Ti-O impurity levels for the TiO{sub 2} band gap. The (Fe, N) co-deposited TiO{sub 2} has a narrower band gap of 1.97 eV than Fe-implanted TiO{sub 2} (3.14 eV) and N-doped TiO{sub 2} (2.16 eV). A significant reduction of TiO{sub 2} band gap energy from 3.22 to 1.97 eV was achieved, which resulted in the extension of photocatalytic activity of TiO{sub 2} from UV to Vis regime. The photocatalytic activity and removal rate were approximately two-fold higher than that of the Fe-implanted TiO{sub 2} under visible light irradiation. - Graphical abstract: The electronic properties of (Fe, N) co-deposited TiO{sub 2} films determined by theoretical calculations is graphically shown; Fe and N preferentially substitute the Ti and O site, to form impurity level. Highlights: > The MPII produces a simple and low cost process for the fabrication of visible light photocatalysts. > Both theoretical and experimental approaches are used to discuss the relationship between band structure and photocatalysis. > The Fe and N preferentially substitute the Ti and O site, which generate additional Fe-O and N-Ti-O impurity levels for the TiO{sub 2} band gap. > A significant reduction of TiO{sub 2} band gap energy from 3.22 to 1.97 eV was achieved.

OSTI ID:
21580189
Journal Information:
Journal of Solid State Chemistry, Vol. 184, Issue 8; Other Information: DOI: 10.1016/j.jssc.2011.05.036; PII: S0022-4596(11)00285-4; Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
Country of Publication:
United States
Language:
English