Formation of acceptor centers under the action of redox media on the surface of Cd{sub x}Hg{sub 1-x}Te films

Journal Article · Tue Dec 15 00:00:00 EST 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609130041· OSTI ID:21562387

Varavin, V S

The effect of redox media on the formation of acceptor centers in the Cd{sub x}Hg{sub 1-x}Te films grown by molecular beam epitaxy on the GaAs (301) substrates is studied. When tested for long-term stability, the untreated n-type films do not change their parameters, whereas the treated films exhibit a decrease in the conductivity and the mobility of charge carriers by nearly two orders of magnitude. It is shown that, on the treatments, a source of acceptors is formed at the surface, and the acceptors are most likely mercury vacancies.

• OSTI ID: 21562387
• Journal Information: Semiconductors, Vol. 43, Issue 13; Other Information: DOI: 10.1134/S1063782609130041; Copyright (c) 2009 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
FILMS
GALLIUM ARSENIDES
MERCURY
MOLECULAR BEAM EPITAXY
STABILITY
SUBSTRATES
SURFACES
VACANCIES
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
METALS
PNICTIDES
POINT DEFECTS