Formation of three-dimensional ZnSe-based semiconductor nanostructures
- Russian Academy of Sciences, Fiber Optics Research Center (Russian Federation)
- Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
Nanostructures consisting of a 10-nm-thick sacrificial layer of ZnMgSSe and a 20-nm-thick stressed bilayer of ZnSSe/ZnSe were grown by molecular-beam epitaxy on GaAs substrates. Upon removal of the sacrificial layer by selective etching, multiwall ZnSSe/ZnSe microtubes were formed.
- OSTI ID:
- 21562366
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 44; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTAL GROWTH METHODS
EPITAXY
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PNICTIDES
REMOVAL
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACE FINISHING
THREE-DIMENSIONAL CALCULATIONS
ZINC COMPOUNDS
ZINC SELENIDES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTAL GROWTH METHODS
EPITAXY
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PNICTIDES
REMOVAL
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACE FINISHING
THREE-DIMENSIONAL CALCULATIONS
ZINC COMPOUNDS
ZINC SELENIDES