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Formation of three-dimensional ZnSe-based semiconductor nanostructures

Journal Article · · Semiconductors
;  [1];  [2];  [1]
  1. Russian Academy of Sciences, Fiber Optics Research Center (Russian Federation)
  2. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
Nanostructures consisting of a 10-nm-thick sacrificial layer of ZnMgSSe and a 20-nm-thick stressed bilayer of ZnSSe/ZnSe were grown by molecular-beam epitaxy on GaAs substrates. Upon removal of the sacrificial layer by selective etching, multiwall ZnSSe/ZnSe microtubes were formed.
OSTI ID:
21562366
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 44; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English