Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells
- St. Petersburg State Electrotechnical University (LETI) (Russian Federation)
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
For the first time, using a complex of admittance spectroscopy, light-emitting heterostructures with InGaN/GaN multiple quantum wells were studied in a wide temperature range of 6-300 K. Three peaks are found in the conductance spectra; these peaks correspond to emission of charge carriers from the quantum wells and point defects distributed in the semiconductor bulk. Two low-temperature peaks possess an anomalous behavior, specifically, the peak with a low value of apparent activation energy (17 meV) is shifted to higher temperatures compared with the higher-energy peak (30 meV). The latter is attributed to a bulk defect having anomalously large capture cross section {sigma}{sub n} = 1.5 x 10{sup -11} cm{sup 2}.
- OSTI ID:
- 21562333
- Journal Information:
- Semiconductors, Vol. 44, Issue 3; Other Information: DOI: 10.1134/S1063782610030115; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ACTIVATION ENERGY
CHARGE CARRIERS
COMPLEXES
CROSS SECTIONS
DEFECTS
EMISSION
GALLIUM NITRIDES
PEAKS
POINT DEFECTS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
TEMPERATURE RANGE 0065-0273 K
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ENERGY
GALLIUM COMPOUNDS
MATERIALS
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
TEMPERATURE RANGE