Exciton binding energy in semiconductor quantum dots

Journal Article · Thu Apr 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610040147· OSTI ID:21562316

Pokutnii, S. I., E-mail: [e-mail] ^[1]

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1. National Academy of Sciences of Ukraine, G.V. Kurdjumov Institute for Metal Physics (Ukraine)

In the adiabatic approximation in the context of the modified effective mass approach, in which the reduced exciton effective mass {mu} = {mu}(a) is a function of the radius a of the semiconductor quantum dot, an expression for the exciton binding energy E{sub ex}(a) in the quantum dot is derived. It is found that, in the CdSe and CdS quantum dots with the radii a comparable to the Bohr exciton radii a{sub ex}, the exciton binding energy E{sub ex}(a) is substantially (respectively, 7.4 and 4.5 times) higher than the exciton binding energy in the CdSe and CdS single crystals.

• OSTI ID: 21562316
• Journal Information: Semiconductors, Vol. 44, Issue 4; Other Information: DOI: 10.1134/S1063782610040147; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADIABATIC APPROXIMATION
BINDING ENERGY
CADMIUM SELENIDES
CADMIUM SULFIDES
EFFECTIVE MASS
MONOCRYSTALS
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
APPROXIMATIONS
CADMIUM COMPOUNDS
CALCULATION METHODS
CHALCOGENIDES
CRYSTALS
ENERGY
INORGANIC PHOSPHORS
MASS
MATERIALS
NANOSTRUCTURES
PHOSPHORS
SELENIDES
SELENIUM COMPOUNDS
SULFIDES
SULFUR COMPOUNDS