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Title: Deposition of thin Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films by pulsed laser ablation

Journal Article · · Semiconductors
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  1. Drogobych State Pedagogical University (Ukraine)
  2. Lvivska Politekhnika National University (Ukraine)
  3. National Academy of Sciences of Ukraine, Institute of Single Crystals (Ukraine)

Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films were obtained by pulsed laser ablation. The films were deposited in vacuum (1 x 10{sup -5} Torr) on single crystal substrates of Al{sub 2}O{sub 3} (0001), BaF{sub 2} (111), and fresh cleavages of KCl or NaCl (001) heated to 453-523 K. The films were 10-1500 nm thick. The structures of the bulk material of targets and films were studied by X-ray diffractometry and transmission high-energy electron diffraction, respectively. Electrical properties of the films were measured in the temperature range of 77-300 K. It is shown that the films possess semiconductor properties. Several activation portions are observed in the temperature dependences of resistivity; the energies of activation portions depend on the film thickness and crystallite size.

OSTI ID:
21562310
Journal Information:
Semiconductors, Vol. 44, Issue 4; Other Information: DOI: 10.1134/S1063782610040238; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
Country of Publication:
United States
Language:
English