Spin-peierls transition in the random impurity sublattice of a semiconductor

Journal Article · Tue Jun 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610060035· OSTI ID:21562287

Zabrodskii, A G; Tisnek, T V; Goloshchapov, S I ^[1]

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1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

A study of electron spin resonance in uncompensated Ge:As semiconductor samples in the vicinity of the insulator-metal second-order phase transiti on reveals that the interaction of spins localized at As atoms brings about a distortion of the crystal lattice and enhances the localization. This effect occurs in the range of electron concentrations n = 3 x 10{sup 17}-3.7 x 10{sup 17} cm{sup -3}, just below the critical point of the phase transition. The effect is explained in the context of a model considering the spin-Peierls transition in the random impurity sublattice of the semiconductor, and its features, as compared to other known materials where the spin-Peierls transition is observed, are understood.

• OSTI ID: 21562287
• Journal Information: Semiconductors, Vol. 44, Issue 6; Other Information: DOI: 10.1134/S1063782610060035; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMS
CRYSTAL LATTICES
ELECTRON SPIN RESONANCE
ELECTRONS
IMPURITIES
INTERACTIONS
METALS
PHASE TRANSFORMATIONS
SEMICONDUCTOR MATERIALS
SPIN
ANGULAR MOMENTUM
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
LEPTONS
MAGNETIC RESONANCE
MATERIALS
PARTICLE PROPERTIES
RESONANCE