Pulsed semiconductor lasers with higher optical strength of cavity output mirrors
- Elfolum Ltd. (Russian Federation)
Asymmetric heterostructures with an ultrathick waveguide based on an AlGaAs/GaAs alloy system that allow lasing at a wavelength of 905 nm have been developed and fabricated by hydride metalorganic vapor-phase epitaxy. The internal optical loss and internal quantum efficiency of semiconductor lasers based on such structures were 0.7 cm{sup -1} and 97%, respectively. It is shown that the highest output optical power of laser diodes with antireflecting (SiO{sub 2}) and reflecting (Si/SiO{sub 2}) coatings deposited on untreated Fabry-Perot cavity facets obtained by cleaving in an oxygen atmosphere reached 67 W in the pulsed mode and is limited by mirror damage. Treatment of Fabry-Perot cavity facets by etching in argon plasma and the formation of coatings with passivating and oxygen-blocking GaN and Si{sub 3}N{sub 4} layers allowed an increase in the maximum output optical power to 120 W. Mirror damage was not observed at the attained output optical power.
- OSTI ID:
- 21562275
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 44; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALLOY SYSTEMS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARGON
ARSENIC COMPOUNDS
ARSENIDES
ASYMMETRY
ATMOSPHERES
CHALCOGENIDES
COATINGS
CRYSTAL GROWTH METHODS
EFFICIENCY
ELEMENTS
EPITAXY
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM NITRIDES
GASES
HYDRIDES
HYDROGEN COMPOUNDS
LASERS
LAYERS
MINERALS
MIRRORS
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
OXIDE MINERALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
RARE GASES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SILICA
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
SOLID STATE LASERS
VAPOR PHASE EPITAXY
WAVEGUIDES
WAVELENGTHS