Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes

Journal Article · Tue Jun 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610060229· OSTI ID:21562270

Lopin, A V; Puzikov, V M; Baumer, V N ^[1]; Dmitruk, I N ^[2]

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1. National Academy of Sciences of Ukraine, Institute for Single Crystals (Ukraine)
2. National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)

The study demonstrates the possibility of forming heterostructures consisting of nanocrystalline SiC layers of the cubic 3C polytype (the lower layer on the substrate) and the rhombohedral 21R polytype (the upper layer) by direction deposition of nanocrystalline SiC layers onto a substrate subjected to gradient heating. The structure and order of arrangement of the SiC layers are analyzed in detail by X-ray diffraction studies, femtosecond photoluminescence measurements, and optical spectroscopy. The nature of the peaks observed in the photoluminescence, optical reflectance, and absorption spectra is discussed.

• OSTI ID: 21562270
• Journal Information: Semiconductors, Vol. 44, Issue 6; Other Information: DOI: 10.1134/S1063782610060229; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTRA
CRYSTALS
DEPOSITION
FABRICATION
HEATING
LAYERS
NANOSTRUCTURES
PEAKS
PHOTOLUMINESCENCE
SILICON CARBIDES
SPECTROSCOPY
SUBSTRATES
TRIGONAL LATTICES
X-RAY DIFFRACTION
CARBIDES
CARBON COMPOUNDS
COHERENT SCATTERING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFRACTION
EMISSION
LUMINESCENCE
PHOTON EMISSION
SCATTERING
SILICON COMPOUNDS
SPECTRA