The problem of uniformity of properties of 4H-SiC CVD films
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
Nonuniformities of electrical properties of 4H-SiC CVD films have been revealed using physicochemical reactions occurring upon introduction of radiation-induced structural defects. Primary knocked-on atoms and vacancies actively interact with impurities and defects of the starting material and thereby form the final system of radiation centers. The samples were irradiated with 900-keV electrons and 8-MeV protons at doses not leading to conductivity compensation (<7.5 x 10{sup 12} cm{sup -2}) and a dose of 6 x 10{sup 14} cm{sup -2} causing deep compensation. Despite their area-averaging nature, capacitance methods demonstrated that characteristics of samples {approx}3 mm in size are not identical. The nuclear spectrometry technique, which enables microprobing of samples, demonstrated individual behavior of separate parts of a film with areas of tens of square micrometers.
- OSTI ID:
- 21562252
- Journal Information:
- Semiconductors, Vol. 44, Issue 7; Other Information: DOI: 10.1134/S1063782610070237; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ATOMS
CAPACITANCE
CHEMICAL VAPOR DEPOSITION
DEFECTS
DOSES
ELECTRONS
FILMS
IMPURITIES
KEV RANGE
KNOCK-ON
MEV RANGE
PROTONS
SILICON CARBIDES
SPECTROSCOPY
BARYONS
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
DEPOSITION
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
ENERGY RANGE
FERMIONS
HADRONS
LEPTONS
NUCLEONS
PHYSICAL PROPERTIES
SILICON COMPOUNDS
SURFACE COATING