Formation of composite InGaN/GaN/InAlN quantum dots

Journal Article · Fri Oct 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610100167· OSTI ID:21562201

Zavarin, E E; Kryzhanovskaya, N V; Lundin, W V; Saharov, A V; Usov, S O; Brunkov, P N; Goncharov, V V ^[1]; Cherkashin, N A; Hytch, M ^[2]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
2. National Center for Scientific Research (CNRS), Center for Material Elaboration and Structural Studies (CEMES) (France)

Composite InGaN/GaN/InAlN quantum dots (QDs) have been formed and studied. The structural properties of thin InAlN layers overgrown with GaN have been analyzed, and it is shown that 3D islands with lateral sizes of {approx}(20-30) nm are formed in structures of this kind. It is demonstrated that deposition of a thin InGaN layer onto the surface of InAlN islands overgrown with a thin GaN layer leads to transformation of the continuous InGaN layer to an array of isolated QDs with lateral sizes of 20-30 nm and heights of 2-3 nm. The position of these QDs in the growth direction correlates with that of InAlN islands.

• OSTI ID: 21562201
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
GALLIUM COMPOUNDS
GALLIUM NITRIDES
ISLANDS
LAYERS
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
QUANTUM DOTS
SURFACES