Recombination of charge carriers in the GaAs-based p-i-n diode

Journal Article · Fri Oct 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610100209· OSTI ID:21562198

Yushenko, A Y ^[1]; Gushchin, S M ^[2]; Dmitriev, D V; Zhuravlev, K S; Toropov, A I ^[3]

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1. Tomsk State University of Control Systems and Radioelectronics (Russian Federation)
2. OAO Research Institute of Semiconductor Devices (Russian Federation)
3. Russian Academy of Sciences, Institute of Semiconductor Physics (Russian Federation)

It is established that the radiative recombination of charge carriers plays a substantial role in the GaAs-based p-i-n diodes at high densities of the forward current. It is shown experimentally that the diodes operating in microwave integrated circuits intensely emit light in the IR range with wavelengths from 890 to 910 nm. The obtained results indicate the necessity of taking into account the features of recombination processes in the GaAs-based microwave p-i-n diodes.

• OSTI ID: 21562198
• Journal Information: Semiconductors, Vol. 44, Issue 10; Other Information: DOI: 10.1134/S1063782610100209; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
CURRENTS
DENSITY
EMISSION
GALLIUM ARSENIDES
INTEGRATED CIRCUITS
MICROWAVE RADIATION
RECOMBINATION
VISIBLE RADIATION
WAVELENGTHS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
GALLIUM COMPOUNDS
MICROELECTRONIC CIRCUITS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS