Transformation of the plasmon spectrum in a grating-gate transistor structure with spatially modulated two-dimensional electron channel

Journal Article · Mon Nov 15 00:00:00 EST 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610110059· OSTI ID:21562189

Popov, V V ^[1]; Shur, M S ^[2]

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1. Kotelnikov Institute of Radio Engineering and Electronics of RAS (Saratov Branch) (Russian Federation)
2. Rensselaer Polytechnic Institute, Department of Electrical, Computer, and System Engineering and Center for Integrated Electronics, CII9015 (United States)

We present the theory of plasmon excitation in a grating-gate transistor structure with spatially modulated 2D electron channel. The plasmon spectrum varies depending on the electron density modulation in the transistor channel. We report on the frequency ranges of plasmon mode excitation in the gated and ungated regions of the channel and on the interaction of these different types of plasmon modes. We show that a constructive influence of the ungated regions of the electron channel considerably increases the intensity of the gated plasmon resonances and reduces the plasmon-resonance linewidth in the grating-gated transistor structure.

• OSTI ID: 21562189
• Journal Information: Semiconductors, Vol. 44, Issue 11; Other Information: DOI: 10.1134/S1063782610110059; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON DENSITY
ELECTRONS
EXCITATION
FREQUENCY RANGE
GRATINGS
INTERACTIONS
MODULATION
RESONANCE
SPECTRA
TRANSFORMATIONS
TRANSISTORS
ELEMENTARY PARTICLES
ENERGY-LEVEL TRANSITIONS
FERMIONS
LEPTONS
SEMICONDUCTOR DEVICES