Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

Journal Article · Wed Dec 15 00:00:00 EST 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610120122· OSTI ID:21562146

Kalyuzhniy, N A; Mintairov, S A; Shvarts, M Z; Lantratov, V M ^[1]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

• OSTI ID: 21562146
• Journal Information: Semiconductors, Vol. 44, Issue 12; Other Information: DOI: 10.1134/S1063782610120122; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EFFICIENCY
ELECTRONS
OPTIMIZATION
RADIATION DOSES
SERVICE LIFE
SOLAR CELLS
THICKNESS
DIMENSIONS
DIRECT ENERGY CONVERTERS
DOSES
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
LEPTONS
LIFETIME
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR EQUIPMENT