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Title: High temperature magnetic properties of Fe{sub 81-x}Co{sub x}Ga{sub 19}/Si(100) films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3560120· OSTI ID:21560151
 [1];  [2];  [1]
  1. Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan 10617 (China)
  2. Institute of Physics, Academia Sinica, Taipei, Taiwan 11529 (China)

Fe{sub 81-x}Co{sub x}Ga{sub 19} (with x ranging from 0 to 19 at.% Co) films with thicknesses of about 110 nm were deposited on Si(100) substrates by the dc magnetron sputtering method. The structures of these films at room temperature (RT) were analyzed by x-ray diffraction. Magnetic hysteresis loops of each film were measured from room temperature (RT) to 800 deg. C, and their saturation magnetization (4{pi}M{sub S}) and coercivity (H{sub C}) were plotted as a function of temperature (T). Saturation magnetostriction ({lambda}{sub S}) at RT was also measured. The substitution of Co for Fe would give rise to increases in H{sub C} and {lambda}{sub S}. In terms of high temperature magnetic properties, (A) we find that for each film, there is one low-temperature-phase Curie point (T{sub C1}) and one high-temperature-phase Curie point (T{sub C2}); (B) based on the temperature dependence of 4{pi}M{sub S}, we calculated the reduced hyperbolic Bessel function I{sub 5/2}(T); from the relationship {lambda}{sub S}(T)=I{sub 5/2}(T)x{lambda}{sub S}(RT), we can compare the performances of {lambda}{sub S}(T) at higher temperatures; and (C) H{sub C} decreases slightly as T increases initially, but it reaches a maximum when either T{sub C1} or T{sub C2} is approached. It is concluded that the Fe{sub 62}Co{sub 19}Ga{sub 19} film has the optimal high-temperature magnetic properties, including a larger {lambda}{sub S}(T), higher T{sub C1}, and moderate H{sub C}(T).

OSTI ID:
21560151
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 7; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: DOI: 10.1063/1.3560120; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English