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Title: Switching field distribution of planar-patterned CrPt{sub 3} nanodots fabricated by ion irradiation

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3565492· OSTI ID:21560116
 [1]; ; ;  [1]
  1. Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan)

Planar-patterned CrPt{sub 3} ordered L1{sub 2} nanodots with various bit sizes (D) from 220 to 55 nm were fabricated by the local irradiation of 30 keV of Kr{sup +} ions not by conventional physical etching. Patterned nanodots with bit size {<=} 65 nm show either dark or bright contrast, suggesting that they have single domain structure. Switching field distribution of nanodots was studied by taking magnetic force microcopy images, in the progress of the magnetization reversal. As-prepared CrPt{sub 3} film exhibited perpendicular hysteresis loop with the coercivity of 5.5 kOe. Compared with the as-prepared film, the average switching field (H{sub sf}) of the CrPt{sub 3} nanodots increased as 6.5, 8.5, and 9.2 kOe while the switching field distribution ({Delta}H{sub sf}) decreased as 6.8, 3.6, and 2.8 kOe, for the patterned nanodots with bit sizes of 220, 150, 65 nm, respectively. We found that the small {Delta}H{sub sf}/H{sub sf} is possible in the high density planar bit patterned media fabricated by ion irradiation.

OSTI ID:
21560116
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 7; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: DOI: 10.1063/1.3565492; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English