Anomalously strong pinning of the filling factor {nu}=2 in epitaxial graphene

Journal Article · Wed Jun 15 04:00:00 EDT 2011 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.83.233402· OSTI ID:21544782

Tzalenchuk, A ^[1]; Yakimova, R ^[2]; Kubatkin, S; Lara-Avila, S ^[3]; Kopylov, S; Fal'ko, V I ^[4]

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1. National Physical Laboratory, Hampton Road, Teddington, TW11 0LW (United Kingdom)
2. Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83 Linkoeping (Sweden)
3. Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-412 96 Goetenborg (Sweden)
4. Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 10{sup 10} in the Hall resistance-quantization measurements.

• OSTI ID: 21544782
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 23 Vol. 83; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACCURACY
CAPACITANCE
CARBIDES
CARBON
CARBON COMPOUNDS
CRYSTAL GROWTH METHODS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
HALL EFFECT
HONEYCOMB STRUCTURES
LAYERS
MAGNETIC FIELDS
MECHANICAL STRUCTURES
NONMETALS
PHYSICAL PROPERTIES
QUANTIZATION
SILICON CARBIDES
SILICON COMPOUNDS
SUBSTRATES