Dynamics of domain wall driven by spin-transfer torque

Journal Article · Sun May 01 04:00:00 EDT 2011 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.83.184416· OSTI ID:21544759

Chureemart, P; Evans, R F. L.; Chantrell, R W ^[1]

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1. Department of Physics, University of York, York YO10 5DD (United Kingdom)

Spin-torque switching of magnetic devices offers new technological possibilities for data storage and integrated circuits. We have investigated domain-wall motion in a ferromagnetic thin film driven by a spin-polarized current using an atomistic spin model with a modified Landau-Lifshitz-Gilbert equation including the effect of the spin-transfer torque. The presence of the spin-transfer torque is shown to create an out-of-plane domain wall, in contrast to the external-field-driven case where an in-plane wall is found. We have investigated the effect of the spin torque on domain-wall displacement, domain-wall velocity, and domain-wall width, as well as the equilibration time in the presence of the spin-transfer torque. We have shown that the minimum spin-current density, regarded as the critical value for domain-wall motion, decreases with increasing temperature.

• OSTI ID: 21544759
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 18 Vol. 83; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANGULAR MOMENTUM
CURRENT DENSITY
ELECTRONIC CIRCUITS
EQUATIONS
FILMS
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
ORIENTATION
PARTICLE PROPERTIES
SPIN
SPIN ORIENTATION
THIN FILMS
TORQUE
VELOCITY