Disorder-induced reversal of spin polarization in the Heusler alloy Co{sub 2}FeSi

Journal Article · Fri Apr 01 00:00:00 EDT 2011 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.83.140409· OSTI ID:21538276

Bruski, P; Ramsteiner, M; Brandt, O; Friedland, K -J; Farshchi, R; Herfort, J; Riechert, H ^[1]; Erwin, S C ^[2]

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1. Paul-Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)
2. Center for Computational Materials Science, Naval Research Laboratory, Washington, DC 20375 (United States)

We study the spin polarization in the conduction band of Co{sub 2}FeSi layers with a different degree of structural order. The injected spin polarization in Co{sub 2}FeSi/(Al,Ga)As spin light-emitting diodes as well as the planar Hall effect measured for the Co{sub 2}FeSi injectors exhibit a sign reversal between injectors crystallized in the ordered L2{sub 1} phase and the Fe-Si disordered B2 phase. These results are explained by a disorder-induced change in the spin polarization at the Fermi energy of Co{sub 2}FeSi. Support for the occurrence of such a striking change in the electronic band structure is obtained by first principles calculations.

• OSTI ID: 21538276
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 83, Issue 14; Other Information: DOI: 10.1103/PhysRevB.83.140409; (c) 2011 American Institute of Physics; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COBALT COMPOUNDS
COMPUTERIZED SIMULATION
HALL EFFECT
HEUSLER ALLOYS
IRON COMPOUNDS
LAYERS
LIGHT EMITTING DIODES
SILICON COMPOUNDS
SPIN
SPIN ORIENTATION
ALLOYS
ALUMINIUM ALLOYS
ANGULAR MOMENTUM
COPPER ALLOYS
COPPER BASE ALLOYS
CORROSION RESISTANT ALLOYS
MANGANESE ALLOYS
ORIENTATION
PARTICLE PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SIMULATION
TRANSITION ELEMENT ALLOYS
TRANSITION ELEMENT COMPOUNDS