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Influence of sputtering power on the high frequency properties of nanogranular FeCoHfO thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3563063· OSTI ID:21538239
; ; ; ; ;  [1];  [2]
  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 (China)
  2. Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716 (United States)
Soft magnetic nanogranular FeCoHfO thin films were fabricated using rf magnetron sputtering in an oxygen/argon ambient. During the deposition process, the partial pressure of oxygen was fixed at 2.5% and sputtering power was used as the control parameter, varying from 50 to 300 W. It was found that the film electrical resistivity ({rho}) decreases steeply with the increase of sputtering power, and the saturation magnetization (4{pi}M{sub s}) and the natural ferromagnetic resonant frequency f{sub r} increase with increasing sputtering power from 50 to 200 W, and then decrease when sputtering power exceeded 200 W. The maximum value of 4{pi}M{sub s} and f{sub r} were 20.5 kG and 3.2GHz, respectively. The coercivity of films had a contrary trend compared with 4{pi}M{sub s} and f{sub r}, and its minimum value was about 1 Oe. The physical origin of the influence was suggested to be related to the structure and composition changes in films.
OSTI ID:
21538239
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English