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Title: Epitaxial strain and antiferromagnetism in Heusler Fe{sub 2}VSi thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3555089· OSTI ID:21538223
; ;  [1]
  1. Department of Crystalline Materials Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

The effects of biaxial strain on the electrical and magnetic properties of an antiferromagnetic Heusler compound Fe{sub 2}VSi were systematically investigated. A series of epitaxial Fe{sub 2}VSi thin films on MgAl{sub 2}O{sub 4} and MgO substrates were fabricated with different tensile strains by varying the substrate-lattice mismatch and the film thickness. The strain was characterized by the ratio of the out-of-plane lattice parameter c to the in-plane lattice parameter a; this ratio c/a varied from 0.987 to 0.998 at room temperature. The tensile epitaxial strain was found to increase the antiferromagnetic Neel temperature T{sub N} to 193 K, which is 70 K higher than that for the unstrained bulk material. A clear dependence of T{sub N} on c/a was observed, which is consistent with theoretical predictions in which the band Jahn-Teller effect plays a significant role.

OSTI ID:
21538223
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 7; Other Information: DOI: 10.1063/1.3555089; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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