Tuning etch selectivity of fused silica irradiated by femtosecond laser pulses by controlling polarization of the writing pulses

Journal Article · Tue Mar 01 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3555080· OSTI ID:21538135

Xiaoming, Yu; Bin, Zeng ^[1]; Yang, Liao; Fei, He; Ya, Cheng; Zhizhan, Xu ^[1]; Sugioka, Koji; Midorikawa, Katsumi ^[2]

---

1. State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P. O. Box 800-211, Shanghai 201800 (China)
2. Laser Technology Laboratory, RIKEN - Advanced Science Institute, Hirosawa 2-1, Wako, Saitama 351-0198 (Japan)

We report on experimental study on chemical etch selectivity of fused silica irradiated by femtosecond laser with either linear or circular polarization in a wide range of pulse energies. The relationships between the etch rates and pulse energies are obtained for different polarization states, which can be divided into three different regions. A drop of the etch rate for high pulse energy region is observed and the underlying mechanism is discussed. The advantage of using circularly polarized laser is justified owing to its unique capability of providing a 3D isotropic etch rate.

• OSTI ID: 21538135
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 5; Other Information: DOI: 10.1063/1.3555080; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
ETCHING
LASER RADIATION
MEMBRANES
MOLECULES
POLARIZATION
POLARIZED BEAMS
PRECURSOR
PULSES
SCREENING
SCREENS
SILICA
SILICON COMPOUNDS
TUNING
ELECTROMAGNETIC RADIATION
MINERALS
OXIDE MINERALS
RADIATIONS
SURFACE FINISHING