Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

Journal Article · Tue Feb 15 04:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3549685· OSTI ID:21538104

Roul, Basanta; Kumar, Mahesh ^[1]; Rajpalke, Mohana K; Bhat, Thirumaleshwara N; Krupanidhi, S B ^[1]; Sinha, Neeraj ^[2]; Kalghatgi, A T ^[3]

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1. Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)
2. Office of Principal Scientific Advisor, Government of India, New Delhi 110011 (India)
3. Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India)

InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TE and TFE models were 1.08 and 1.43 eV, respectively.

• OSTI ID: 21538104
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH METHODS
EMISSION
EPITAXY
FIELD EMISSION
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INDIUM COMPOUNDS
INDIUM NITRIDES
INTERFACES
ISOTOPIC EXCHANGE
MATERIALS
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
PHOSPHORUS COMPOUNDS
PLASMA
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
THERMIONIC EMISSION