The effect of He plasma treatment on properties of organosilicate glass low-k films
- Nuclear Physics Institute, Moscow State University, 119992 Moscow (Russian Federation)
- IMEC, B-3001 Leuven (Belgium)
The effect of low-pressure He plasma on properties of nanoporous organosilicate glasses low-k films with 24% and 33% open porosity is studied. The influence of ions, VUV radiation, and metastable atoms are extracted separately using a special experimental system designed for this purpose. The low-k films treated in He plasma were exposed to O or H atoms in the downstream of high-pressure O{sub 2} or H{sub 2} rf discharge. The changes in chemical composition and structure occurring in low-k films were measured before and after all treatments. The loss probabilities of oxygen and hydrogen atoms on the low-k film surface were measured for both treated and pristine films. It is shown that the film pretreatment in He plasma leads to the noticeable densification of the top surface layer up to complete sealing all the films studied. The sealing layer prevents O atoms from deep penetration to the film bulk and carbon extraction. The sealing mechanism related to the joint impact of low-energy ions and VUV photons with metastable atoms in He plasma is discussed in detail.
- OSTI ID:
- 21538097
- Journal Information:
- Journal of Applied Physics, Vol. 109, Issue 4; Other Information: DOI: 10.1063/1.3549733; (c) 2011 American Institute of Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ATOMS
DIELECTRIC MATERIALS
EXTRACTION
FAR ULTRAVIOLET RADIATION
GLASS
HELIUM IONS
HYDROGEN
ION BEAMS
LAYERS
LOSSES
ORGANIC COMPOUNDS
OXYGEN
PHOSPHORUS
PLASMA
POROUS MATERIALS
SILICATES
SURFACES
THIN FILMS
BEAMS
CHARGED PARTICLES
ELECTROMAGNETIC RADIATION
ELEMENTS
FILMS
IONS
MATERIALS
NONMETALS
OXYGEN COMPOUNDS
RADIATIONS
SEPARATION PROCESSES
SILICON COMPOUNDS
ULTRAVIOLET RADIATION