A comparative study of TiN and TiC: Oxidation resistance and retention of xenon at high temperature and under degraded vacuum

Journal Article · Sat Jan 01 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3524267· OSTI ID:21538038

Gavarini, S; Bes, R; Millard-Pinard, N; Peaucelle, C; Perrat-Mabilon, A; Gaillard, C ^[1]; Cardinal, S; Garnier, V ^[2]

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1. Universite de Lyon, Universite Claude Bernard Lyon 1, CNRS/IN2P3, UMR5822, IPNL, 69622 Villeurbanne Cedex (France)
2. Universite de Lyon, INSA de Lyon, MATEIS, CNRS UMR 5510, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

Dense TiN and TiC samples were prepared by hot pressing using micrometric powders. Xenon species (simulating rare gas fission products) were then implanted into the ceramics. The samples were annealed for 1 h at 1500 deg. C under several degraded vacuums with P{sub O{sub 2}} varying from 10{sup -6} to 2x10{sup -4} mbars. The oxidation resistance of the samples and their retention properties with respect to preimplanted xenon species were analyzed using scanning electron microscopy, grazing incidence x-ray diffraction, Rutherford backscattering spectrometry, and nuclear backscattering spectrometry. Results indicate that TiC is resistant to oxidation and does not release xenon for P{sub O{sub 2{<=}}}6x10{sup -6} mbars. When P{sub O{sub 2}} increases, geometric oxide crystallites appear at the surface depending on the orientation and size of TiC grains. These oxide phases are Ti{sub 2}O{sub 3}, Ti{sub 3}O{sub 5}, and TiO{sub 2}. Apparition of oxide crystallites is associated with the beginning of xenon release. TiC surface is completely covered by the oxide phases at P{sub O{sub 2}}=2x10{sup -4} mbars up to a depth of 3 {mu}m and the xenon is then completely released. For TiN samples, the results show a progressive apparition of oxide crystallites (Ti{sub 3}O{sub 5} mainly) at the surface when P{sub O{sub 2}} increases. The presence of the oxide crystallites is also directly correlated with xenon release, the more oxide crystallites are growing the more xenon is released. TiN surface is completely covered by an oxide layer at P{sub O{sub 2}}=2x10{sup -4} mbars up to 1 {mu}m. A correlation between the initial fine microstructure of TiN and the properties of the growing layer is suggested.

• OSTI ID: 21538038
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 1; Other Information: DOI: 10.1063/1.3524267; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BACKSCATTERING
CAPACITY
CERAMICS
CORRELATIONS
CORROSION RESISTANCE
GRAIN SIZE
HOT PRESSING
LAYERS
OXIDATION
POWDERS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SURFACES
TITANIUM CARBIDES
TITANIUM NITRIDES
TITANIUM OXIDES
X-RAY DIFFRACTION
CARBIDES
CARBON COMPOUNDS
CHALCOGENIDES
CHEMICAL REACTIONS
COHERENT SCATTERING
DIFFRACTION
ELECTRON MICROSCOPY
FABRICATION
HEAT TREATMENTS
MATERIALS WORKING
MICROSCOPY
MICROSTRUCTURE
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
PRESSING
SCATTERING
SIZE
SPECTROSCOPY
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS