Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

High efficiency semimetal/semiconductor nanocomposite thermoelectric materials

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3514145· OSTI ID:21537989
 [1]; ; ;  [2]; ; ; ;  [3]; ;  [4]; ; ; ;  [5]
  1. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 (United States)
  2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
  3. Jack Baskin School of Engineering, University of California, Santa Cruz, California 95064 (United States)
  4. Department of Materials, University of California, Santa Barbara, California 93106 (United States)
  5. Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)
Rare-earth impurities in III-V semiconductors are known to self-assemble into semimetallic nanoparticles which have been shown to reduce lattice thermal conductivity without harming electronic properties. Here, we show that adjusting the band alignment between ErAs and In{sub 0.53}Ga{sub 0.47-X}Al{sub X}As allows energy-dependent scattering of carriers that can be used to increase thermoelectric power factor. Films of various Al concentrations were grown by molecular beam epitaxy, and thermoelectric properties were characterized. We observe concurrent increases in electrical conductivity and Seebeck coefficient with increasing temperatures, demonstrating energy-dependent scattering. We report the first simultaneous power factor enhancement and thermal conductivity reduction in a nanoparticle-based system, resulting in a high figure of merit, ZT=1.33 at 800 K.
OSTI ID:
21537989
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English