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Title: Intrinsic and extrinsic relaxation of CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics: Effect of sintering

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3511444· OSTI ID:21537940
; ;  [1];  [2]
  1. State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, 28 Xianning West Road, Xi'an, Shaanxi 710049 (China)
  2. Department of Electrical Engineering, Alabama A and M University, P.O. Box 297, Huntsville, Alabama 35762 (United States)

The effect of sintering process on the electrical properties of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramic dielectrics were investigated in this paper. It was found that grain size is affected by sintering and the nonlinear current-voltage (I-V) property will decrease with the increased sintering time. Also, the frequency and temperature dependences of dielectric permittivity and loss in the ranges of 10{sup -1}-10{sup 7} Hz and 130-270 K were studied. Two relaxation processes with activation energy of 0.51 eV and 0.10 eV, respectively, were found in the frequency dependence of tan {delta} and Cole-Cole planes, which can be interpreted in terms of insulating grain boundaries and semiconducting grains. It was suggested that grain boundary Maxwell-Wagner relaxation and ionization of oxygen vacancy V{sub O}{sup ++}, proposed as extrinsic and intrinsic relaxations, are responsible for the dielectric behaviors of CCTO ceramics.

OSTI ID:
21537940
Journal Information:
Journal of Applied Physics, Vol. 108, Issue 10; Other Information: DOI: 10.1063/1.3511444; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English